1 high speed cmos logic ic elm7sh00xb 2-input nand gate general description features application selection guide elm7sh00xb-el symbol a function 00: 2-input nand gate b package m: sot-25 t : sc-70-5(sot-353) c product version b d taping direction el: refer to pkg file maximum absolute ratings parameter symbol limit unit power supply voltage vdd -0.5 to +6.0 v input voltage vin -0.5 to +6.0 v output voltage vout -0.5 to vdd+0.5 v input protection diode current iik - 20 ma output parasitic diode current iok 20 ma output current iout 25 ma vdd/gnd current idd, ignd 50 ma power dissipation pd 150 mw storage temperature tstg -65 to +150 c elm7sh00xb is cmos 2-input nand gate which is suitable for battery-operated devices because of its ultra high speed opeartion performed by low voltage. the low power consumption contributes to longer battery life, which makes long time operation of devices possible. the internal circuit which provides high noise immunity and stable output is composed of 3 stages, including buffered output. ? same electrical characteristic and high speed operation as 74vhc series ? low consumption current : idd=1.0a(max.)(top=25 c) ? wide power voltage range : 2.0v to 5.5v ? wide input voltage range : vih=5.5v(max.)(vdd=0 to 5.5v) ? high speed : tpd=2ns(typ.)(vdd=5.0v) ? small package : sot-25, sc-70-5(sot-353) ? same function and pin con?guration as elm7sxxb ? cell phones ? digital cameras ? portable electrical appliances like pda, etc. ? computers and peripherals ? digital electrical appliances like lcd tv sets, dvd recorders/players, stb, etc. ? modi?cation inside print board, adjustment of timing, solution to noise ? power voltage change from 5v to 3v elm7sh 0 0 x b - el a b c d 3 -
2 pin no. pin name 1 inb 2 ina 3 gnd 4 outx 5 vdd high speed cmos logic ic elm7sh00xb 2-input nand gate pin con?guration top view dc electrical characteristics suggested operating condition parameter symbol limit unit power voltage vdd 2.0 to 5.5 v input voltage vin 0 to 5.5 v output voltage vout 0 to vdd v operating temperature top -40 to +85 c high-input down-time tr, tf vdd=3.3 0.3v 0 to 200 ns vdd=5.0 0.5v 0 to 100 input output ina inb outx low low high low high high high low high high high low parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. input voltage vih 2.0 1.50 1.50 v 3.0 2.10 2.10 5.5 3.85 3.85 vil 2.0 0.50 0.50 v 3.0 0.90 0.90 5.5 1.65 1.65 output voltage voh 2.0 1.90 2.00 1.90 v vin=vil or vih ioh=-50a 3.0 2.90 3.00 2.90 4.5 4.40 4.50 4.40 3.0 2.58 2.48 ioh=-4ma 4.5 3.94 3.80 ioh=-8ma vol 2.0 0.10 0.10 v vin=vih iol=50a 3.0 0.10 0.10 4.5 0.10 0.10 3.0 0.36 0.44 iol=4ma 4.5 0.36 0.44 iol=8ma input current iin 5.5 -0.1 0.1 -1.0 1.0 a vin=vdd or gnd static current idd 5.5 1.0 10.0 a vin=vdd or gnd 3 - 1 2 3 5 4
3 * cpd is ic's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit.averaged operating current consumption at non load is calculated as following formula: idd(opr)=cpd ? vdd ? fin+idd high speed cmos logic ic elm7sh00xb 2-input nand gate ac electrical characteristics test circuit measured wave pattern marking * output should be opened when measuring current consumption. tr=tf=3ns sot-25 symbol mark content a f elm7sh series b 1 elm7sh00xb c a to z (except i, o, x) lot no. sc-70-5 parameter sym. vdd cl top=25c top=-40 to +85c unit condition min. typ. max. min. max. propagation delay-time tplh 3.3 0.3 15 3.7 7.9 1.0 9.5 ns refer to test circuit tphl 3.3 7.9 1.0 9.5 tplh 3.3 0.3 50 5.4 11.4 1.0 13.0 tphl 4.6 11.4 1.0 13.0 tplh 5.0 0.5 15 2.7 5.5 1.0 6.5 tphl 2.5 5.5 1.0 6.5 tplh 5.0 0.5 50 3.6 7.5 1.0 8.5 tphl 3.5 7.5 1.0 8.5 input capacity cin 5.0 2.0 10.0 10.0 pf vin=vdd or gnd equivalent inner capacity cpd 9.3 pf f=1mhz p u l s e o s c i l l a t o r 5 0 i n p u t o u t p u t v d d c l ? 3 n s 3 n s t p h l 5 0 % 5 0 % 9 0 % 9 0 % 1 0 % 1 0 % 5 0 % 5 0 % i n p u t t p l h v d d g n d v o h v o l o u t p u t 3 - a b c b c a
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